Measurement & Instrumentation


Advancements in Power Semiconductors, Millimeter Wave Technology, and System-on-chips

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Published: 24 Nov 2017

This Microelectronics TOE profiles power semiconductors, millimeter wave technology, and system-on-chips. Innovations profiled include GaN (gallium nitride)-based enhancement mode high electron mobility transistors (E-HEMTs), high electron mobility transistors for next-gen RF devices, field programmable gate arrays (FPGAs) integrated in system-on-chips (SoCs), graphic process units to control data storage, and integrated circuit (IC) for 5G applications. The Microelectronics TechVision Opportunity Engine (TOE) captures global electronics-related innovations and developments on a weekly basis. Developments are centred on electronics attributed by low power and cost, smaller size, better viewing, display and interface facilities, wireless connectivity, higher memory capacity, flexibility and wearables. Research focus themes include small footprint lightweight devices (CNTs, graphene), smart monitoring and control (touch and haptics), energy efficiency (LEDs, OLEDs, power and thermal management, energy harvesting), and high speed and improved conductivity devices (SiC, GaN, GaAs). Miniaturization, a move toward lower power consumption, and the need for enhanced features are driving innovations in the electronics sector. Technology focus areas include semiconductor manufacturing and design, flexible electronics, 3D integration/IC, MEMS and NEMS, solid state lighting, advanced displays, nanoelectronics, wearable electronics, brain computer interface, advanced displays, near field communication, and next generation data storage or memory. Keywords: Power semiconductor, millimeter wave, MMW, system-on-chip, SoC, transistor, 5G, data storage, GaN

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